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Proceedings Paper

III-nitride tunnel junctions for efficient solid state lighting
Author(s): Sriram Krishnamoorthy; Fatih Akyol; Siddharth Rajan
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Paper Abstract

We discuss the design and demonstration ultra-low resistance III-nitride tunnel junctions, and how tunnel junctions could solve the long-standing problem of efficiency droop in solid state lighting. We have used nanoscale band engineering based on polarization and mid-gap states to reduce tunneling resistance by four orders of magnitude. We will discuss experimental demonstration of highly efficient tunnel junctions (resistivity ~ 0.1 mOhm-cm2) in PN junctions, p-contact free LEDs, and multiple junction structures. Finally we will show how tunneling based carrier regeneration in multiple active region cascade LEDs could help to enable low current, high voltage operation to overcome the efficiency droop problem.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861F (8 March 2014); doi: 10.1117/12.2039382
Show Author Affiliations
Sriram Krishnamoorthy, The Ohio State Univ. (United States)
Fatih Akyol, The Ohio State Univ. (United States)
Siddharth Rajan, The Ohio State Univ. (United States)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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