Share Email Print
cover

Proceedings Paper

[beta]-Ga2O3 and single-crystal phosphors for high-brightness white LEDs and LDs, and [beta]-Ga2O3 potential for next generation of power devices
Author(s): Encarnación Garcia Víllora; Stelian Arjoca; Kiyoshi Shimamura; Daisuke Inomata; Kazuo Aoki
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

β-Ga2O3 is the most transparent conductive oxide, well known since several decades for its large bandgap of 4.8 eV. Its potential as semiconductor material, however, is just emerging in recent years. Present work shows the development of βGa2O3 for semiconductor applications and its current state-of-the-art. The discussion is focused on three different aspects: (1) Advantageous growth from melt of large-size β-Ga2O3single-crystals. High-crystalline quality and carrier control make possible the production of conductive and semi-insulating wafers. (2) β-Ga2O3as substrate for homoepitaxy as well as for heteroepitaxial deposition of GaN-based devices. High-brightness blue-LEDs with vertical current injection are demonstrated. (3) Potential of β-Ga2O3for high-power devices with higher breakdown voltage than GaN and SiC counterparts. The first Schottky barrier diode is shown, as well as first transistors (MESFET and MOSFET) are indicated. Single-crystal phosphors are introduced as novel alternative to currently used powder phosphors. In connection with high-brightness white light-sources, based on LEDs or LDs plus phosphor converters, single-crystal phosphors possess advantageous features. These avoid the use of resins and exhibit a very high internal quantum efficiency, which remains stable with the temperature increase.

Paper Details

Date Published: 8 March 2014
PDF: 12 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871U (8 March 2014); doi: 10.1117/12.2039305
Show Author Affiliations
Encarnación Garcia Víllora, National Institute for Materials Science (Japan)
Stelian Arjoca, National Institute for Materials Science (Japan)
Waseda Univ. (Japan)
Kiyoshi Shimamura, National Institute for Materials Science (Japan)
Waseda Univ. (Japan)
Daisuke Inomata, Koha Co., Ltd. (Japan)
Kazuo Aoki, Koha Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top