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Proceedings Paper

Advances in AlGaInN laser diode technology
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; Mike Bockowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A. E. Kelly
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Paper Abstract

The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode ‘mini-array’ with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.

Paper Details

Date Published: 8 March 2014
PDF: 10 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861O (8 March 2014); doi: 10.1117/12.2039253
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
Mike Bockowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Kucharski, Ammono Sp. z o.o. (Poland)
G. Targowski, TopGaN Ltd. (Poland)
S. Watson, Univ. of Glasgow (United Kingdom)
A. E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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