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Proceedings Paper

InSb photodetectors with PIN and nBn designs
Author(s): A. Evirgen; J. Abautret; J. P. Perez; H. Aït-Kaci; P. Christol; J. Fleury; H. Sik; A. Nedelcu; R. Cluzel; A. Cordat
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Paper Abstract

InSb pin photodiodes and nBn photodetectors were fabricated by Molecular Beam epitaxy (MBE) on InSb (100) n-type substrate and characterized. MBE Growth conditions were carefully studied to obtain high quality InSb layers, exhibiting in pin photodiode design dark current density values as low as 13nA.cm-2 at -50mV and R0A product as high as 6x106 WΩcm2 at 77K. Then, a new unipolar nBn InSb/InAlSb/InSb detector structure on InSb substrate were designed in order to suppress generation-recombination dark current. The first InSb nBn devices were fabricated and preliminary electrical characterizations are reported.

Paper Details

Date Published: 31 January 2014
PDF: 11 pages
Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899313 (31 January 2014); doi: 10.1117/12.2039156
Show Author Affiliations
A. Evirgen, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
SOFRADIR (France)
J. Abautret, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
SOFRADIR (France)
J. P. Perez, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
H. Aït-Kaci, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
P. Christol, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
J. Fleury, Sagem Défense Sécurité (France)
H. Sik, Sagem Défense Sécurité (France)
A. Nedelcu, SOFRADIR (France)
R. Cluzel, SOFRADIR (France)
A. Cordat, SOFRADIR (France)


Published in SPIE Proceedings Vol. 8993:
Quantum Sensing and Nanophotonic Devices XI
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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