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Proceedings Paper

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors
Author(s): Markus Broell; Petrus Sundgren; Andreas Rudolph; Wolfgang Schmid; Anton Vogl; Martin Behringer
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Paper Abstract

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Paper Details

Date Published: 27 February 2014
PDF: 6 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030L (27 February 2014); doi: 10.1117/12.2039078
Show Author Affiliations
Markus Broell, OSRAM Opto Semiconductors GmbH (Germany)
Petrus Sundgren, OSRAM Opto Semiconductors GmbH (Germany)
Andreas Rudolph, OSRAM Opto Semiconductors GmbH (Germany)
Wolfgang Schmid, OSRAM Opto Semiconductors GmbH (Germany)
Anton Vogl, OSRAM Opto Semiconductors GmbH (Germany)
Martin Behringer, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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