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Proceedings Paper

Design, fabrication, and characterization of InSb avalanche photodiode
Author(s): J. Abautret; A. Evirgen; J. P. Perez; P. Christol; A. Rouvié; R. Cluzel; A. Cordat; J. Rothman
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Paper Abstract

In this communication, the potentiality of InSb material as an avalanche photodiode (APD) device is investigated. Current density-voltage (J-V) characteristics at 77K of InSb pin photodiodes were simulated by using ATLAS software from SILVACO, in dark conditions and under illumination. In order to validate parameter values used for the modeling, theoretical J-V results were compared with experimental measurements performed on InSb diodes fabricated by molecular beam epitaxy. Next, assuming a multiplication process only induced by the electrons (e-APD), different designs of separate absorption and multiplication (SAM) APD structure were theoretically investigated and the first InSb SAM APD structure with 1μm thick multiplication layer was then fabricated and characterized.

Paper Details

Date Published: 31 January 2014
PDF: 10 pages
Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899314 (31 January 2014); doi: 10.1117/12.2039011
Show Author Affiliations
J. Abautret, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
SOFRADIR (France)
A. Evirgen, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
SOFRADIR (France)
J. P. Perez, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
P. Christol, Institut d'Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
A. Rouvié, SOFRADIR (France)
R. Cluzel, SOFRADIR (France)
A. Cordat, SOFRADIR (France)
J. Rothman, CEA-Leti (France)


Published in SPIE Proceedings Vol. 8993:
Quantum Sensing and Nanophotonic Devices XI
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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