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Proceedings Paper

A broadband silicon electro-absorption modulator (EAM) using a Schottky diode
Author(s): Uiseok Jeong; Dongchul Han; Dong Ho Lee; Kyungwoon Lee; J. Kim; Jung Ho Park
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Paper Abstract

A silicon optical modulator operating at high speed and low voltage is proposed by using a Schottky diode. The optical modulation is achieved by the intensity change of guiding light due to free-carrier absorption, not conventional interference effects. The rib waveguide structure of the modulator has a height of 340 nm, a etch depth of 150 nm, a width of 4.8 μm, and a modulation length of 500 μm. It was designed to maximize the free carrier injection by a Schottky contact on the rib waveguide center. The center of the rib waveguide is lightly doped with phosphorus of 1016 cm−3, and the sides are heavily doped with phosphorus of 1020 cm−3 to improve modulation depth by injecting free carriers into the center of the rib waveguide. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve high speed operation, travelling-wave type electrodes were designed to allow co-propagation of electrical and optical signals along the waveguide. The device simulated results demonstrate a 3.3 dB modulation depth for a 500 μm modulation length with 3 Vpp driving voltages. We demonstrated a Schottky modulator operating Si EAM at 3 Vpp with a 3 dB bandwidth of 7 GHz.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8988, Integrated Optics: Devices, Materials, and Technologies XVIII, 89881M (8 March 2014); doi: 10.1117/12.2038800
Show Author Affiliations
Uiseok Jeong, Korea Univ. (Korea, Republic of)
Dongchul Han, Korea Univ. (Korea, Republic of)
Samsung Electronics Co. (Korea, Republic of)
Dong Ho Lee, Korea Univ. (Korea, Republic of)
Kyungwoon Lee, Korea Univ. (Korea, Republic of)
J. Kim, Korea Univ. (Korea, Republic of)
Jung Ho Park, Korea Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8988:
Integrated Optics: Devices, Materials, and Technologies XVIII
Jean Emmanuel Broquin; Gualtiero Nunzi Conti, Editor(s)

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