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Proceedings Paper

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode
Author(s): Duanhua Kong; Taek Kim; Sihan Kim; Hyungi Hong; Igor Shcherbatko; Youngsoo Park; Dongjae Shin; Kyoung-Ho Ha; Gitae Jeong
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Paper Abstract

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8991, Optical Interconnects XIV, 899109 (8 March 2014); doi: 10.1117/12.2038642
Show Author Affiliations
Duanhua Kong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Samsung Advanced Institute of Technology (Korea, Republic of)
Taek Kim, Samsung Advanced Institute of Technology (Korea, Republic of)
Sihan Kim, Samsung Advanced Institute of Technology (Korea, Republic of)
Hyungi Hong, Samsung Advanced Institute of Technology (Korea, Republic of)
Igor Shcherbatko, Samsung Advanced Institute of Technology (Korea, Republic of)
Youngsoo Park, Samsung Advanced Institute of Technology (Korea, Republic of)
Dongjae Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyoung-Ho Ha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Gitae Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8991:
Optical Interconnects XIV
Henning Schröder; Ray T. Chen; Alexei L. Glebov, Editor(s)

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