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Proceedings Paper

Cascade pumping of GaSb-based type-I quantum well diode lasers
Author(s): L. Shterengas; R. Liang; G. Kipshidze; T. Hosoda; S. Suchalkin; G. Belenky
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Paper Abstract

Cascade GaSb-based type-I quantum well diode lasers were designed and fabricated. Cascade pumping was achieved utilizing efficient interband tunneling through "leaky" window in band alignment at GaSb/InAs heterointerface. The 100% efficient carrier recycling between stages was confirmed by twofold increase lightcurrent characteristics slope of two-stage 2.4 – 3.3 μm cascade lasers as compared to reference single-stage devices. Moderate internal optical loss increase was observed in cascade lasers with interband injector located near the optical mode peak. Cascade pumping scheme increased the continuous wave output power of room temperature operated 2.4 - 3 μm semiconductor lasers and led to improved power conversion efficiency.

Paper Details

Date Published: 27 February 2014
PDF: 10 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900213 (27 February 2014); doi: 10.1117/12.2038429
Show Author Affiliations
L. Shterengas, Stony Brook Univ. (United States)
R. Liang, Stony Brook Univ. (United States)
G. Kipshidze, Stony Brook Univ. (United States)
T. Hosoda, Stony Brook Univ. (United States)
S. Suchalkin, Stony Brook Univ. (United States)
G. Belenky, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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