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Proceedings Paper

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
Author(s): Yanina G. Fedorenko; Mark A. Hughes; Julien L. Colaux; C. Jeynes; Russell M. Gwilliam; Kevin P. Homewood; Jin Yao; Dan W. Hewak; Tae-Hoon Lee; Stephen R. Elliott; B. Gholipour; Richard J. Curry
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Paper Abstract

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

Paper Details

Date Published: 7 March 2014
PDF: 7 pages
Proc. SPIE 8982, Optical Components and Materials XI, 898213 (7 March 2014); doi: 10.1117/12.2037965
Show Author Affiliations
Yanina G. Fedorenko, Univ. of Surrey (United Kingdom)
Mark A. Hughes, Univ. of Surrey (United Kingdom)
Julien L. Colaux, Univ. of Surrey (United Kingdom)
C. Jeynes, Univ. of Surrey (United Kingdom)
Russell M. Gwilliam, Univ. of Surrey (United Kingdom)
Kevin P. Homewood, Univ. of Surrey (United Kingdom)
Jin Yao, Univ. of Southampton (United Kingdom)
Dan W. Hewak, Univ. of Southampton (United Kingdom)
Tae-Hoon Lee, Univ. of Cambridge (United Kingdom)
Stephen R. Elliott, Univ. of Cambridge (United Kingdom)
B. Gholipour, Nanyang Technological Univ. (Singapore)
Richard J. Curry, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 8982:
Optical Components and Materials XI
Michel J. F. Digonnet; Shibin Jiang, Editor(s)

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