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Proceedings Paper

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach
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Paper Abstract

Nonpolar m-plane GaN layers were grown on patterned Si (112) substrates by metal-organic chemical vapor deposition (MOCVD). A two-step growth procedure involving a low-pressure (30 Torr) first step to ensure formation of the m-plane facet and a high-pressure step (200 Torr) for improvement of optical quality was employed. The layers grown in two steps show improvement of the optical quality: the near-bandedge photoluminescence (PL) intensity is about 3 times higher than that for the layers grown at low pressure, and deep emission is considerably weaker. However, emission intensity from m-GaN is still lower than that of polar and semipolar (1 100 ) reference samples grown under the same conditions. To shed light on this problem, spatial distribution of optical emission over the c+ and c wings of the nonpolar GaN/Si was studied by spatially resolved cathodoluminescence and near-field scanning optical microscopy.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898628 (8 March 2014); doi: 10.1117/12.2037930
Show Author Affiliations
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
S. Okur, Virginia Commonwealth Univ. (United States)
F. Zhang, Virginia Commonwealth Univ. (United States)
M. Monavarian, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
S. Metzner, Otto-von-Guericke-Univ. Magdeburg (Germany)
C. Karbaum, Otto-von-Guericke-Univ. Magdeburg (Germany)
F. Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
J. Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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