Share Email Print

Proceedings Paper

High gain 1.3-μm GaInNAs SOA with fast-gain dynamics and enhanced temperature stability
Author(s): D. Fitsios; G. Giannoulis; N. Iliadis; V.-M. Korpijärvi; J. Viheriälä; A. Laakso; S. Dris; M. Spyropoulou; H. Avramopoulos; G. T. Kanellos; N. Pleros; M. Guina
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Semiconductor optical amplifiers (SOAs) are a well-established solution of optical access networks. They could prove an enabling technology for DataCom by offering extended range of active optical functionalities. However, in such costand energy-critical applications, high-integration densities increase the operational temperatures and require powerhungry external cooling. Taking a step further towards improving the cost and energy effectiveness of active optical components, we report on the development of a GaInNAs/GaAs (dilute nitride) SOA operating at 1.3μm that exhibits a gain value of 28 dB and combined with excellent temperature stability owing to the large conduction band offset between GaInNAs quantum well and GaAs barrier. Moreover, the characterization results reveal almost no gain variation around the 1320 nm region for a temperature range from 20° to 50° C. The gain recovery time attained values as short as 100 ps, allowing implementation of various signal processing functionalities at 10 Gb/s. The combined parameters are very attractive for application in photonic integrated circuits requiring uncooled operation and thus minimizing power consumption. Moreover, as a result of the insensitivity to heating issues, a higher number of active elements can be integrated on chip-scale circuitry, allowing for higher integration densities and more complex optical on-chip functions. Such component could prove essential for next generation DataCom networks.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8982, Optical Components and Materials XI, 898208 (7 March 2014); doi: 10.1117/12.2037904
Show Author Affiliations
D. Fitsios, Ctr. for Research and Technology Hellas (Greece)
Aristotle Univ. of Thessaloniki (Greece)
G. Giannoulis, National Technical Univ. of Athens (Greece)
N. Iliadis, National Technical Univ. of Athens (Greece)
V.-M. Korpijärvi, Tampere Univ. of Technology (Finland)
J. Viheriälä, Tampere Univ. of Technology (Finland)
A. Laakso, Tampere Univ. of Technology (Finland)
S. Dris, National Technical Univ. of Athens (Greece)
M. Spyropoulou, National Technical Univ. of Athens (Greece)
H. Avramopoulos, National Technical Univ. of Athens (Greece)
G. T. Kanellos, Ctr. for Research and Technology Hellas (Greece)
N. Pleros, Ctr. for Research and Technology Hellas (Greece)
Aristotle Univ. of Thessaloniki (Greece)
M. Guina, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 8982:
Optical Components and Materials XI
Michel J. F. Digonnet; Shibin Jiang, Editor(s)

© SPIE. Terms of Use
Back to Top