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Proceedings Paper

Dual-facet coupling of SOA array on 4-um silicon-on-Insulator implementing a hybrid integrated SOA-MZI wavelength converter
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Paper Abstract

Hybrid integration on Silicon-on-Insulator (SOI) has emerged as a practical solution for compact and high-performance Photonic Integrated Circuits (PICs). It aims at combining the cost-effectiveness and CMOS-compatibility benefits of the low-loss SOI waveguide platform with the versatile active optical functions that can be realized by III-V photonic materials. The utilization of SOI, as an integration board, with μm-scale dimensions allows for an excellent optical mode matching between silicon rib waveguides and active chips, allowing for minimal-loss coupling of the pre-fabricated IIIV components. While dual-facet coupling as well as III-V multi-element array bonding should be employed to enable enhanced active on-chip functions, so far only single side SOA bonding has been reported. In the present communication, we present a novel integration scheme that flip-chip bonds a 6-SOA array on 4-μm thick SOI technology by coupling both lateral SOA facets to the waveguides, and report on the experimental results of wavelength conversion operation of a dual-element Semiconductor Optical Amplifier – Mach Zehnder Interferometer (SOA-MZI) circuit. Thermocompression bonding was applied to integrate the pre-fabricated SOAs on SOI, with vertical and horizontal alignment performed successfully at both SOA facets. The demonstrated device has a footprint of 8.2mm x 0.3mm and experimental evaluation revealed a 12Gb/s wavelength conversion operation capability with only 0.8dB power penalty for the first SOA-MZI-on-SOI circuit and a 10Gb/s wavelength conversion operation capability with 2 dB power penalty for the second SOA-MZI circuit. Our experiments show how dual facet integration can significantly increase the level of optical functionalities achievable by flip-chip hybrid technology and pave the way for more advanced and more densely PICs.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8990, Silicon Photonics IX, 89900N (8 March 2014); doi: 10.1117/12.2037874
Show Author Affiliations
T. Alexoudi, Ctr. for Research and Technology Hellas (Greece)
Aristotle Univ. of Thessaloniki (Greece)
D. Fitsios, Ctr. for Research and Technology Hellas (Greece)
Aristotle Univ. of Thessaloniki (Greece)
G. T. Kanellos, Ctr. for Research and Technology Hellas (Greece)
N. Pleros, Ctr. for Research and Technology Hellas (Greece)
Aristotle Univ. of Thessaloniki (Greece)
T. Tekin, Technische Univ. Berlin (Germany)
M. Cherchi, VTT Technical Research Ctr. of Finland (Finland)
S. Ylinen, VTT Technical Research Ctr. of Finland (Finland)
M. Harjanne, VTT Technical Research Ctr. of Finland (Finland)
M. Kapulainen, VTT Technical Research Ctr. of Finland (Finland)
T. Aalto, VTT Technical Research Ctr. of Finland (Finland)


Published in SPIE Proceedings Vol. 8990:
Silicon Photonics IX
Joel Kubby; Graham T. Reed, Editor(s)

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