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Proceedings Paper

Watt-level continuous-wave diode lasers at 1180 nm with InGaAs quantum wells
Author(s): K. Paschke; F. Bugge; G. Blume; D. Feise; W. John; S. Knigge; M. Matalla; H. Wenzel; G. Erbert
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Paper Abstract

High-power broad area lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1200 h at 1 W and are believed to be a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectrum by single-pass second harmonic generation to bridge the spectral region currently not accessible with direct emitting diode lasers. Future applications are laser cooling of sodium, high resolution glucose content measurements as well as spectroscopy on rare earth elements.

Paper Details

Date Published: 12 March 2014
PDF: 7 pages
Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896509 (12 March 2014); doi: 10.1117/12.2037752
Show Author Affiliations
K. Paschke, Ferdinand-Braun-Institut (Germany)
F. Bugge, Ferdinand-Braun-Institut (Germany)
G. Blume, Ferdinand-Braun-Institut (Germany)
D. Feise, Ferdinand-Braun-Institut (Germany)
W. John, Ferdinand-Braun-Institut (Germany)
S. Knigge, Ferdinand-Braun-Institut (Germany)
M. Matalla, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 8965:
High-Power Diode Laser Technology and Applications XII
Mark S. Zediker, Editor(s)

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