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Proceedings Paper

Design and characterization of avalanche photodiodes in submicron CMOS technologies
Author(s): L. Pancheri; T. Bendib; G.-F. Dalla Betta; D. Stoppa
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Paper Abstract

The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

Paper Details

Date Published: 7 March 2014
PDF: 8 pages
Proc. SPIE 8982, Optical Components and Materials XI, 898211 (7 March 2014); doi: 10.1117/12.2037566
Show Author Affiliations
L. Pancheri, Univ. degli Studi di Trento (Italy)
T. Bendib, Univ. degli Studi di Trento (Italy)
Univ. of Batna (Algeria)
G.-F. Dalla Betta, Univ. degli Studi di Trento (Italy)
D. Stoppa, Fondazione Bruno Kessler (Italy)


Published in SPIE Proceedings Vol. 8982:
Optical Components and Materials XI
Michel J. F. Digonnet; Shibin Jiang, Editor(s)

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