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Proceedings Paper

Design and fabrication of three-axis accelerometer sensor microsystem for wide temperature range applications using semi-custom process
Author(s): A. Merdassi; Y. Wang; G. Xereas; V. P. Chodavarapu
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Paper Abstract

This paper describes an integrated CMOS-MEMS inertial sensor microsystem, consisting of a 3-axis accelerometer sensor device and its complementary readout circuit, which is designed to operate over a wide temperature range from - 55°C to 175°C. The accelerometer device is based on capacitive transduction and is fabricated using PolyMUMPS, which is a commercial process available from MEMSCAP. The fabricated accelerometer device is then post-processed by depositing a layer of amorphous silicon carbide to form a composite sensor structure to improve its performance over an extended wide temperature range. We designed and fabricated a CMOS readout circuit in IBM 0.13μm process that interfaces with the accelerometer device to serve as a capacitance to voltage converter. The accelerometer device is designed to operate over a measurement range of ±20g. The described sensor system allows low power, low cost and mass-producible implementation well suited for a variety of applications with harsh or wide temperature operating conditions.

Paper Details

Date Published: 7 March 2014
PDF: 12 pages
Proc. SPIE 8973, Micromachining and Microfabrication Process Technology XIX, 89730O (7 March 2014); doi: 10.1117/12.2037344
Show Author Affiliations
A. Merdassi, McGill Univ. (Canada)
Y. Wang, McGill Univ. (Canada)
G. Xereas, McGill Univ. (Canada)
V. P. Chodavarapu, McGill Univ. (Canada)

Published in SPIE Proceedings Vol. 8973:
Micromachining and Microfabrication Process Technology XIX
Mary Ann Maher; Paul J. Resnick, Editor(s)

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