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Proceedings Paper

Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes
Author(s): Katarzyna Holc; Annik Jakob; Thomas Weig; Klaus Köhler; Oliver Ambacher; Ulrich T. Schwarz
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Paper Abstract

We investigate the influence of the epitaxial layer roughness on the far-field profile of the optical mode in gallium Nitride-based, c-plane ridge waveguide laser diodes. Occasionally, we observe long-range growth instabilities leading to a periodical modulation of the surface. Amplitude and period of this surface roughness is typically on the order of a few 10nm and 20 μm, respectively. Using different characterization techniques, we investigate the influence of the surface roughness on the vertical mode profile along the fast axis in the far-field, in particular the contribution of light scattering at the rough waveguide interfaces, as well as that of substrate modes.

Paper Details

Date Published: 27 February 2014
PDF: 9 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020I (27 February 2014); doi: 10.1117/12.2037336
Show Author Affiliations
Katarzyna Holc, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Annik Jakob, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Thomas Weig, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Klaus Köhler, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Oliver Ambacher, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Ulrich T. Schwarz, Fraunhofer-Institut für Angewandte Festkörperphysik (Germany)
Albert-Ludwigs-Univ. Freiburg (Germany)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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