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Proceedings Paper

Strain engineering in germanium microdisks
Author(s): A. Ghrib; M. El Kurdi; M. Prost; M. de Kersauson; L. Largeau; O. Mauguin; G. Beaudoin; S. Sauvage; X. Checoury; G. Ndong; M. Chaigneau; R. Ossikovski; S. David; I. Sagnes; P. Boucaud
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Paper Abstract

The keystone to realize a monolithic integrated source on silicon with germanium is to optimize tensile strain and n-doping. In order to realize an integrated compact source, we demonstrate highly strained n-doped germanium microdisks obtained by two approaches using initially compressed silicon nitride (SiN) deposition. In the first approach, the microdisks are fabricated from relaxed Ge. In a second approach, we use tensile-strained Ge grown on a mismatched buffer layer, thus increasing the global strain in the Ge volume and lowering its gradient. A photoluminescence red-shift up to 450 nm is observed, corresponding to more than 1% biaxial strain.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8990, Silicon Photonics IX, 89901C (8 March 2014); doi: 10.1117/12.2037307
Show Author Affiliations
A. Ghrib, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
M. El Kurdi, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
M. Prost, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
STMicroelectronics (France)
M. de Kersauson, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
L. Largeau, Lab. de Photonique et de Nanostructures, CNRS (France)
O. Mauguin, Lab. de Photonique et de Nanostructures, CNRS (France)
G. Beaudoin, Lab. de Photonique et de Nanostructures, CNRS (France)
S. Sauvage, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
X. Checoury, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)
G. Ndong, Lab. de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique (France)
M. Chaigneau, Lab. de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique (France)
R. Ossikovski, Lab. de Physique des Interfaces et des Couches Minces, CNRS, Ecole Polytechnique (France)
S. David, Lab. des Technologies de la Microélectronique, CNRS, Univ. Joseph Fourier (France)
I. Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
P. Boucaud, Institut d'Électronique Fondamentale, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 8990:
Silicon Photonics IX
Joel Kubby; Graham T. Reed, Editor(s)

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