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Proceedings Paper

Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping
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Paper Abstract

GaN/AlN quantum dots (QDs) have been observed to emit in deep ultra violet (UV) regime. The emission wavelength can be tuned from 270 nm to 238 nm using GaN growth time and Ga flux. In this work, tunnel injection GaN/AlN QD UV LEDs have been fabricated utilizing polarization doped p-n junctions grown on AlN templates on sapphire. The QD EL emission is obtained at 250 nm whereas a second peak emission is observed at 290 nm from the p-type AlGaN. However, the enhanced doping and carrier injection in polarization doped structure boosts the deep-UV emission intensity by 26 times compared to non-polarization doped UV LED.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861W (8 March 2014); doi: 10.1117/12.2037132
Show Author Affiliations
Jai K. Verma, Univ. of Notre Dame (United States)
Vladimir V. Protasenko, Univ. of Notre Dame (United States)
S. M. Islam, Univ. of Notre Dame (United States)
Huili Xing, Univ. of Notre Dame (United States)
Debdeep Jena, Univ. of Notre Dame (United States)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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