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Proceedings Paper

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs
Author(s): Daniel Rosales; B. Gil; T. Bretagnon; F. Zhang; S. Okur; M. Monavarian; N. Izioumskaia; V. Avrutin; Ü. Özgür; H. Morkoç; J. H. Leach
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Paper Abstract

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K–300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89860L (8 March 2014); doi: 10.1117/12.2036984
Show Author Affiliations
Daniel Rosales, Univ. Montpellier 2 (France)
B. Gil, Lab. Charles Coulomb, CNRS (France)
Univ. Montpellier 2 (France)
T. Bretagnon, Lab. Charles Coulomb, CNRS (France)
Univ. Montpellier 2 (France)
F. Zhang, Virginia Commonwealth Univ. (United States)
S. Okur, Virginia Commonwealth Univ. (United States)
M. Monavarian, Virginia Commonwealth Univ. (United States)
N. Izioumskaia, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)
J. H. Leach, Kyma Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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