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Proceedings Paper

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
Author(s): Julien Brault; Benjamin Damilano; Aimeric Courville; Mathieu Leroux; Abdelkarim Kahouli; Maxim Korytov; Philippe Vennéguès; Gaetano Randazzo; Sébastien Chenot; Borge Vinter; Philippe De Mierry; Jean Massies; Daniel Rosales; Thierry Bretagnon; Bernard Gil
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Paper Abstract

(Al,Ga)N light emitting diodes (LEDs), emitting over a large spectral range from 360 nm (GaN) down to 210 nm (AlN), have been successfully fabricated over the last decade. Clear advantages compared to the traditional mercury lamp technology (e.g. compactness, low-power operation, lifetime) have been demonstrated. However, LED efficiencies still need to be improved. The main problems are related to the structural quality and the p-type doping efficiency of (Al,Ga)N. Among the current approaches, GaN nanostructures, which confine carriers along both the growth direction and the growth plane, are seen as a solution for improving the radiative recombination efficiency by strongly reducing the impact of surrounding defects. Our approach, based on a 2D - 3D growth mode transition in molecular beam epitaxy, can lead to the spontaneous formation of GaN nanostructures on (Al,Ga)N over a broad range of Al compositions. Furthermore, the versatility of the process makes it possible to fabricate nanostructures on both (0001) oriented “polar” and (11 2 2) oriented “semipolar” materials. We show that the change in the crystal orientation has a strong impact on the morphological and optical properties of the nanostructures. The influence of growth conditions are also investigated by combining microscopy (SEM, TEM) and photoluminescence techniques. Finally, their potential as UV emitters will be discussed and the performances of GaN / (Al,Ga)N nanostructure-based LED demonstrators are presented.

Paper Details

Date Published: 8 March 2014
PDF: 10 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89860Z (8 March 2014); doi: 10.1117/12.2036924
Show Author Affiliations
Julien Brault, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Benjamin Damilano, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Aimeric Courville, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Mathieu Leroux, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Abdelkarim Kahouli, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Univ. de Nice Sophia Antipolis (France)
Maxim Korytov, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Philippe Vennéguès, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Gaetano Randazzo, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Sébastien Chenot, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Borge Vinter, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
Univ. de Nice Sophia Antipolis (France)
Philippe De Mierry, Ctr. de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS (France)
Jean Massies, Ctr. de Recherche sur l’Hétéro-Epitaxie et ses Applications, CNRS (France)
Daniel Rosales, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Thierry Bretagnon, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Bernard Gil, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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