Share Email Print
cover

Proceedings Paper

High-performance single-spatial mode GaSb type-I laser diodes around 2.1 µm
Author(s): Augustinas Vizbaras; Edgaras Dvinelis; Mindaugas Greibus; Augustinas Trinkunas; Deividas Kovalenkovas; Ieva Šimonytė; Kristijonas Vizbaras
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition these devices have characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.1 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %) GaInAsSb quantum wells. Epi-wafers were processed into a narrow-ridge (3-5 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 30 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 200 mW in CW mode with a far-field fast axis divergence angle of ~ 57 degrees.

Paper Details

Date Published: 31 January 2014
PDF: 6 pages
Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899319 (31 January 2014); doi: 10.1117/12.2036523
Show Author Affiliations
Augustinas Vizbaras, Brolis Semiconductors UAB (Lithuania)
Edgaras Dvinelis, Brolis Semiconductors UAB (Lithuania)
Mindaugas Greibus, Brolis Semiconductors UAB (Lithuania)
Augustinas Trinkunas, Brolis Semiconductors UAB (Lithuania)
Deividas Kovalenkovas, Brolis Semiconductors UAB (Lithuania)
Ieva Šimonytė, Brolis Semiconductors UAB (Lithuania)
Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)


Published in SPIE Proceedings Vol. 8993:
Quantum Sensing and Nanophotonic Devices XI
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top