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Proceedings Paper

Newly developed broadband plasmonic absorber for uncooled infrared detectors
Author(s): Hae-Seok Park; Sung Hyun Nam; Hyun-Gue Hong; Sookyoung Roh; Seokho Yun; JungWoo Kim; Dongil Kwon; U-In Chung
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Paper Abstract

In this paper, we introduce a floating plasmonic absorber having multiple resonances in the 8 ~ 14 μm spectral range and broadband absorption characteristics by adjusting Drude relaxation rate of metal. This plasmonic broadband resonator capable of capturing light with a large optical cross-section area is able to substantially enhance the performance of micro-bolometer (response time, noise equivalent temperature difference, pixel size and so on) due to the significantly reduced thermal mass and conductance. Firstly, to adjust Drude relaxation rate, the mean crystalline size of metal was optimized by changing the deposition condition and the absorption characteristics of absorber were measured by Fourier transform infrared spectroscopy in the 8 ~ 14 μm spectral range. The measurement results show that 1.62 times of broadening in bandwidth was obtained by decreasing the crystalline size from 5.73 nm to 3.18 nm while maintaining the maximum absorption at resonant wavelength of 10 μm within 93 ~ 95%. Comparisons between measurements and CST microwave studio simulations show similar spectral absorption trends. And then, to integrate plasmonic absorber with micro-bolometer, various kinds of plasmonic absorbers which have combinations of short and long dipole resonators were designed and simulated. Based on these results, 12 μm micro-bolometer pixels integrated with plasmonic broadband Ti absorber are designed and fabricated. The optimized Ti resonators with multiple resonance and small crystalline size absorb 88 % of the unpolarized radiation in the 8 ~ 14 μm spectral range on the average.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8977, MOEMS and Miniaturized Systems XIII, 89770I (7 March 2014); doi: 10.1117/12.2036406
Show Author Affiliations
Hae-Seok Park, Samsung Advanced Institute of Technology (Korea, Republic of)
Seoul National Univ. (Korea, Republic of)
Sung Hyun Nam, Samsung Advanced Institute of Technology (Korea, Republic of)
Hyun-Gue Hong, Samsung Advanced Institute of Technology (Korea, Republic of)
Sookyoung Roh, Samsung Advanced Institute of Technology (Korea, Republic of)
Seokho Yun, Samsung Advanced Institute of Technology (Korea, Republic of)
JungWoo Kim, Samsung Advanced Institute of Technology (Korea, Republic of)
Dongil Kwon, Seoul National Univ. (Korea, Republic of)
U-In Chung, Samsung Advanced Institute of Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 8977:
MOEMS and Miniaturized Systems XIII
Wibool Piyawattanametha; Yong-Hwa Park, Editor(s)

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