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Proceedings Paper

The role of electron temperature in the leakage current in QCLs and its impact on the quantum efficiency
Author(s): Yuri V. Flores; Sergii S. Kurlov; Mikaela Elagin; Mykhaylo P. Semtsiv; W. Ted Masselink
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Paper Abstract

We have recently described a method to analyze the leakage current (Jleak) in quantum-cascade lasers (QCLs) for carriers scattering into higher minibands due to LO-phonon absorption. In his presentation we analyze Jleak due to elastic scattering. We illustrate how at low temperature, when inelastic scattering is negligible, this current becomes significant for devices operating at high electron temperatures. Measuring Jleak above threshold we are able to investigate the effect of electron temperature on the differential quantum efficiency. This procedure is supported by a self-consistent calculation of the rate equations based on a phenomenological scattering-rate model. We apply our approach and measure Jleak above threshold as a function of electron temperature for a QCL emitting near 5.4 μm operated at a low duty cycle and a heat sink temperature of 80 K. This current is then modeled using a thermally activated, electron temperature-driven, scattering model based on intersubband interface roughness scattering. As a result, a reduction in the upper laser state population by ∼35% is estimated due to the effect of increased electron temperature. A decrease of the quantum efficiency of ∼80% is estimated for an electron temperature of 400 K.

Paper Details

Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021R (27 February 2014); doi: 10.1117/12.2036371
Show Author Affiliations
Yuri V. Flores, Humboldt Univ. (Germany)
Sergii S. Kurlov, Humboldt Univ. (Germany)
Mikaela Elagin, Humboldt Univ. (Germany)
Mykhaylo P. Semtsiv, Humboldt Univ. (Germany)
W. Ted Masselink, Humboldt Univ. (Germany)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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