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Proceedings Paper

Pulsed-laser deposition of boron nitride films on silicon
Author(s): R. Schmauder; G. Dodel; G. Bilger
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Paper Abstract

Boron nitride (BN) films were deposited on (001) faces of silicon (Si) using pulsed excimer laser ablation at 308 nm and 248 nm. The films were analyzed by Fourier-transform-infrared (FTIR) transmission spectroscopy, x-ray photoelectron-spectroscopy (XPS) and by x-ray diffractometry (XRD). The films are boron rich and contain hexagonal BN (h-BN). They are x-ray amorphous. So far we found no evidence for the formation of cubic BN (c-BN) crystallites in the films.

Paper Details

Date Published: 1 March 1995
PDF: 7 pages
Proc. SPIE 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, (1 March 1995); doi: 10.1117/12.203637
Show Author Affiliations
R. Schmauder, Univ. Stuttgart (Germany)
G. Dodel, Univ. Stuttgart (Germany)
G. Bilger, Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 2498:
Laser Methods of Surface Treatment and Modification: ALT '94 International Conference
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

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