Share Email Print
cover

Proceedings Paper

AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy
Author(s): W. T. Masselink; M. P. Semtsiv; Y. V. Flores; Sergii Kurlov; M. Elagin; G. Monastyrskyi; J.-F. Kischkat; A. Aleksandrova
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Active region designs of QCLs containing composite barriers based on AlAs allow short wavelength emission, improved injection efficiency, and high values of T0 and T1. On the other hand, AlAs introduces challenges, not only in strain compensation and growth, but also in effects on thermal management, thermal stability, and scattering. Leakage current, allowing electrons to bypass transitions between upper and lower laser levels occur due to scattering of electrons into higher-lying states via phonons and interface roughness scattering. This interface roughness scattering is exacerbated by large values of ΔEc and by the rms roughness itself, both of which are pronounced at the AlAs/InGaAs interface. The resulting leakage current noticeably reduces the slope efficiency, leading to more heating to achieve a given emission power. Efficient thermal management requires a buried heterostructure design; the re-growth of InP:Fe, however, needs to be carried out at temperatures consistent with maintaining the highly strained AlAs/InGaAs interfaces. This paper describes the physics of intersubband electron scattering due to strained interfaces and some partially optimized structures with Jth = 1.7 kA/cm2 at 300 K, slope efficiency η = 1.4 W/A, T0 = 175 K, and T1 = 550 K. Re-growth of InP:Fe using gas-source MBE at substrate temperatures below 550°C results in packaged lasers with 7 μm width having high thermal conductance.

Paper Details

Date Published: 27 February 2014
PDF: 6 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021A (27 February 2014); doi: 10.1117/12.2036359
Show Author Affiliations
W. T. Masselink, Humboldt Univ. (Germany)
M. P. Semtsiv, Humboldt Univ. (Germany)
Y. V. Flores, Humboldt Univ. (Germany)
Sergii Kurlov, Humboldt Univ. (Germany)
M. Elagin, Humboldt Univ. (Germany)
G. Monastyrskyi, Humboldt Univ. (Germany)
J.-F. Kischkat, Humboldt Univ. (Germany)
A. Aleksandrova, Humboldt Univ. (Germany)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top