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Proceedings Paper

Internal degradation of 980nm emitting single-spatial-mode lasers during ultrahigh power operation
Author(s): Jens W. Tomm; Martin Hempel; Thomas Elsaesser; Juan Jimenez; Vanesa Hortelano; Mauro Bettiati
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Paper Abstract

Internal degradation of 980 nm emitting single-spatial-mode diode lasers during ultrahigh power operation is investigated for pulsed operation (2 μJ, 20 W). Analysis of the evolution of the emission nearfield with picosecond time resolution enables the observation of the transition from single- to multi-spatial-mode operation at elevated emission powers. Moreover, internal degradation events and subsequent defect propagation processes are in situ monitored by thermal imaging. Subsequently, these devices are opened and defect pattern are inspected by cathodo- and photoluminescence spectroscopy. The results complete earlier findings obtained with broad-area lasers and help to establish models covering defect generation and propagation in edge-emitting devices in general.

Paper Details

Date Published: 7 March 2014
PDF: 7 pages
Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896503 (7 March 2014); doi: 10.1117/12.2036082
Show Author Affiliations
Jens W. Tomm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Martin Hempel, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Thomas Elsaesser, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Juan Jimenez, Univ. de Valladolid (Spain)
Vanesa Hortelano, Univ. de Valladolid (Spain)
Mauro Bettiati, 3S PHOTONICS S.A.S. (France)


Published in SPIE Proceedings Vol. 8965:
High-Power Diode Laser Technology and Applications XII
Mark S. Zediker, Editor(s)

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