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Proceedings Paper

Laser-assisted controlled in-diffusion processes for preparation of optical waveguides and ultrashallow semiconductor junctions
Author(s): Maria Dinescu; N. Chitica; Adriana Lita; D. Pantelica; B. Bucur; A. Ferrari; Gabriella Maiello; Mario Bertolotti; Galina Michailova; C. Gerardi; Rossella Giorgi; T. Dekonimos-Makris; Marco Montecchi
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Paper Abstract

We present new results in the laser doping of two materials of major interest for applications: LiNbO3 and Si. In both cases a solid dopant source was used. Using a free running ruby laser, we have doped single crystalline lithium niobate with Ti down to 1.5 micrometers . A step- like Ti profile was determined by Rutherford BAckscattering Spectrometry. Irradiating with a cw CO2 laser Si wafers coated with a P-containing paste, n-p junctions were obtained.

Paper Details

Date Published: 8 March 1995
PDF: 6 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203594
Show Author Affiliations
Maria Dinescu, Institute of Atomic Physics (Romania)
N. Chitica, Institute of Atomic Physics (Romania)
Adriana Lita, Institute of Atomic Physics (Romania)
D. Pantelica, Institute of Atomic Physics (Romania)
B. Bucur, Institute of Atomic Physics (Romania)
A. Ferrari, Univ. di Roma La Sapienza (Italy)
Gabriella Maiello, Univ. di Roma La Sapienza (Italy)
Mario Bertolotti, Univ. di Roma La Sapienza (Italy)
Galina Michailova, Institute of General Physics (Russia)
C. Gerardi, National Ctr. for Materials Research (Italy)
Rossella Giorgi, ENEA-Casaccia (Italy)
T. Dekonimos-Makris, ENEA-Casaccia (Italy)
Marco Montecchi, ENEA-Casaccia (Italy)


Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)

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