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Proceedings Paper

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure
Author(s): Yamina André; Agnès Trassoudaine; Geoffrey Avit; Kaddour Lekhal; Mohammed R. Ramdani; Christine Leroux; Guillaume Monier; Christelle Varenne; Philip Hoggan; Dominique Castelluci; Catherine Bougerol; François Réveret; Joël Leymarie; Elodie Petit; Vladimir G. Dubrovskii; Evelyne Gil
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Paper Abstract

Hydride Vapor Phase Epitaxy (HVPE) makes use of chloride III-Cl and hydride V-H3 gaseous growth precursors. It is known as a near-equilibrium process, providing the widest range of growth rates from 1 to more than 100 μm/h. When it comes to metal catalyst-assisted VLS (vapor-liquid-solid) growth, the physics of HVPE growth is maintained: high dechlorination frequency, high axial growth rate of nanowires (NWs) up to 170 μm/h. The remarkable features of NWs grown by HVPE are the untapered morphology with constant diameter and the stacking fault-free crystalline phase. Record pure zinc blende cubic phase for 20 μm long GaAs NWs with radii of 10 and 5 nm is shown. The absence of wurtzite phase in GaAs NWs grown by HVPE whatever the diameter is discussed with respect to surface energetic grounds and kinetics. Ni assisted, Ni-Au assisted and catalyst-free HVPE growth of wurtzite GaN NWs is also addressed. Micro-photoluminescence spectroscopy analysis revealed GaN nanowires of great optical quality, with a FWHM of 1 meV at 10 K for the neutral donor bound exciton transition.

Paper Details

Date Published: 7 December 2013
PDF: 10 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89230O (7 December 2013); doi: 10.1117/12.2035485
Show Author Affiliations
Yamina André, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Agnès Trassoudaine, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France)
Univ. d'Auvergne Clermont-Ferrand I (France)
Geoffrey Avit, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Kaddour Lekhal, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Mohammed R. Ramdani, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Christine Leroux, CNRS, Univ. du Sud Toulon-Var (France)
Guillaume Monier, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Christelle Varenne, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Philip Hoggan, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Dominique Castelluci, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Catherine Bougerol, Institut NÉEL, CEA-CNRS-Univ. Joseph Fourier (France)
François Réveret, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Joël Leymarie, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602 (France )
Elodie Petit, Institut de Chimie de Clermont-Ferrand, Univ. Blaise Pascal-Clermont II (France)
Vladimir G. Dubrovskii, St. Petersburg Academic Univ. (Russian Federation)
Ioffe Physico-Technical Institute (Russian Federation)
Evelyne Gil, CNRS, Institut Pascal, Univ. Blaise Pascal-Clermont II (France)
CNRS, UMR 6602


Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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