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Proceedings Paper

Single-photon sources based on InAs/GaAs QDs for solar cell
Author(s): Wei Jia; Zhi Liu; Xunchun Wang
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Paper Abstract

We have grown InAs/GaAs quantum dots (QDs) by droplet epitaxy for application in single photon sources. This growth method enables the formation of QDs without strain, with emission wavelengths of around 1.3μm within the optimal detection range of cost effective silicon detector, and with reduced surface density of several tens to a few QDs per μm2 for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and biexciton emission peaks identified from power dependent and time-resolved micro-photoluminescence (μ-PL) measurements.

Paper Details

Date Published: 21 August 2013
PDF: 6 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082P (21 August 2013); doi: 10.1117/12.2035109
Show Author Affiliations
Wei Jia, Shanghai Institute of Space Power-Sources (China)
Zhi Liu, Shanghai Institute of Space Power-Sources (China)
Xunchun Wang, Shanghai Institute of Space Power-Sources (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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