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Proceedings Paper

Investigation of amorphisation of germanium using modeling and experimental processes
Author(s): S. Almalki; F. Algahtani; M. Blackford; M. S. Alnassar; B. C. Johnson; J. C. McCallum; A. S. Holland
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Paper Abstract

Crystalline germanium substrates were amorphised to a depth of one micron by ion implantation of germanium ions at a series of relatively high energies and dose. Using the ion implantation modeling software TRIM, this paper compares the amorphisation results from the ion implantation simulations and experimental results from transmission electron microscopy (TEM) analysis of cross-sections of implanted samples. TEM cross-section micrographs show a clear boundary between amorphous and crystalline germanium. The effect of amorphisation of Ge on the subsequent formation of Nickel germanide is demonstrated and one significant issue is the increased depth of NiGe grains formed on a-Ge compared with c-Ge.

Paper Details

Date Published: 20 December 2013
PDF: 6 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89235H (20 December 2013); doi: 10.1117/12.2035093
Show Author Affiliations
S. Almalki, RMIT Univ. (Australia)
F. Algahtani, RMIT Univ. (Australia)
M. Blackford, Australian Nuclear Science and Technology Organisation (Australia)
M. S. Alnassar, RMIT Univ. (Australia)
B. C. Johnson, The Univ. of Melbourne (Australia)
J. C. McCallum, The Univ. of Melbourne (Australia)
A. S. Holland, RMIT Univ. (Australia)


Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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