Proceedings Paper
Confinement-factor measurement in laser diodes by absorption-loss modulation with injected carriers| Format | Member Price | Non-Member Price |
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Paper Abstract
Designing of laser diodes needs waveguide parameter optimization and testing. In order to maximize the emitted power of a laser diode an important design parameter is the optical confinement factor (Gamma) of the active region and the reduced confinement factor g equals G/d, where d is the active region thickness. This paper presents a measurement method of the reduced confinement factor by correlating changes in absorption loss with the current density of injected free carriers, for a LPE fabricated double heterostructure single quantum well laser diode with the active region thickness of about 0.1 micrometers . A reduced confinement factor of 8.5 10-2 micrometers -1 and waveguide absorption coefficient of 1.8 cm-1 of the laser diode are reported.
Paper Details
Date Published: 8 March 1995
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203503
Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203503
Show Author Affiliations
C. D. Cengher, Institute of Physics and Technology of Materials (Romania)
Aurel M. Vlaicu, Institute of Physics and Technology of Materials (Romania)
Aurel M. Vlaicu, Institute of Physics and Technology of Materials (Romania)
Gheorghe Iordache, Institute of Physics and Technology of Materials (Romania)
Iulian B. Petrescu-Prahova, Institute of Physics and Technology of Materials (Romania)
Iulian B. Petrescu-Prahova, Institute of Physics and Technology of Materials (Romania)
Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)
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