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Proceedings Paper

3D TCAD simulation of the pixel for TOF
Author(s): Shan Di; Zhongxiang Cao; Yangfan Zhou; Nanjian Wu
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Paper Abstract

This paper presents the design and the simulation of pixel for real time three dimensional (3D) measurements based on Time of Flight (TOF) technique. The pixel is designed to detect the time delay between transmitted and reflected light. Based on 4T active pixel, A TXD transfer gate is added to realize TOF function. In order to enhance lateral drift field, the pixel adopts a split device structure. The implant energy and dose of photodiode are simulated in 2D carefully with simulation tool TCAD. 3D simulation is presented to verify the 3D measurement function of the pixel. The simulation results show that proposed pixel can achieve 10ns transfer time and meet the requirement for TOF.

Paper Details

Date Published: 21 August 2013
PDF: 7 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082I (21 August 2013); doi: 10.1117/12.2034994
Show Author Affiliations
Shan Di, Institute of Semiconductors (China)
Zhongxiang Cao, Institute of Semiconductors (China)
Yangfan Zhou, Institute of Semiconductors (China)
Nanjian Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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