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Proceedings Paper

Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process
Author(s): Zhao-yang Liu; Li-yuan Liu; Nan-jian Wu
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Paper Abstract

This paper presents a design of 1-THz imaging detectors implemented in 180-nm standard CMOS process. Device simulator is adopted to simulate the performances of the detectors and the results are well consistent with the theoretical predictions. An on-chip patch antenna is designed aided by HFSS. The simulated peak directivity and gain of antenna are 6.9dBi and 4.4dBi, respectively. The -10dB impedance bandwidth of the antenna is 28 GHz, which corresponds to 2.8% relative bandwidth. To improve power transfer efficiency, we extract the input impedance of the MOSFET and design a matching network inserted between the MOSFET and antenna. Imaging pixels have been arranged in a 3 x 5 array in 180-nm standard CMOS process.

Paper Details

Date Published: 23 August 2013
PDF: 7 pages
Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 89091E (23 August 2013); doi: 10.1117/12.2034985
Show Author Affiliations
Zhao-yang Liu, Institute of Semiconductors (China)
Li-yuan Liu, Institute of Semiconductors (China)
Nan-jian Wu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 8909:
International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications
Marco Rahm; Konstantin Vodopyanov; Wei Shi; Cunlin Zhang, Editor(s)

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