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Proceedings Paper

Laser reflective interferometry for in situ monitoring of thin films
Author(s): Ioan Vascan; Marius D. Stamate; Iuliana-Mihaela J. Lazar; Gabriel-Octavian Lazar; Ioan I. Rusu
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Paper Abstract

The optimal conditions for the deposition of thin solid films are fitted with many experiments for it is implied an exhaustive work. In this paper, a method to match the optimal conditions during the film deposition is presented. The method provides the possibility to find some important parameters that characterize the film, such as reflection coefficient, absorption factor and, with some restriction, the stoichiometry of the compounds films. A simple laser reflective interferometer has been employed for `in situ' monitoring of ZnO and (alpha) Si-H films, growth through a d.c. planar magnetron sputtering system. The interference oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variation of the extrema of the oscillations provides an estimate of the quality of the film.

Paper Details

Date Published: 8 March 1995
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203496
Show Author Affiliations
Ioan Vascan, Bacau Univ. (Romania)
Marius D. Stamate, Bacau Univ. (Romania)
Iuliana-Mihaela J. Lazar, Bacau Univ. (Romania)
Gabriel-Octavian Lazar, Bacau Univ. (Romania)
Ioan I. Rusu, Bacau Univ. (Romania)


Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)

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