Share Email Print
cover

Proceedings Paper

Dark current characterization and simulation for In0.78Ga0.22As PIN photodetectors
Author(s): Baiqing Liu; Xiaoli Ji; Yiming Liao; Feng Yan; Henqing Tang; Xue Li; Haimei Gong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The dark current characterization of InxGa1-xAs with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with Et= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of InxGa1-xAs( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.

Paper Details

Date Published: 11 September 2013
PDF: 6 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89075A (11 September 2013); doi: 10.1117/12.2034957
Show Author Affiliations
Baiqing Liu, Nanjing Univ. (China)
Xiaoli Ji, Nanjing Univ. (China)
Yiming Liao, Nanjing Univ. (China)
Feng Yan, Nanjing Univ. (China)
Henqing Tang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top