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Proceedings Paper

Light control terahertz modulator based on the semiconductor material
Author(s): Hailin Cui; Lei Jiao; Qingli Zhou; Lijuan Li
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Paper Abstract

We have demonstrated a light control terahertz modulation system based on the semiconductor material, the system is composed of a commercial 850nm 10Gbps light source and a continuous THz source. The semiconductor device is the epitaxial growth Si layer on Si substrate wafer. When the 850nm light and continuous terahertz waves incident simultaneously to this semiconductor wafer, the modulated light can excite photogenerated carriers. And the carrier determines the absorption of terahertz waves, so the amplitude of output terahertz waves will be modulated. The tested modulation depth is 35%. The semiconductor material carriers lifetime determines both the modulation depth and modulation speed. So the carrier lifetime should be trade off considered. The modulation speed has been theoretical calculated and experimental tested. The carriers lifetime is tested about 2ns, and the modulation speed is calculated beyond gigabit per second.

Paper Details

Date Published: 23 August 2013
PDF: 6 pages
Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 890919 (23 August 2013); doi: 10.1117/12.2034912
Show Author Affiliations
Hailin Cui, Capital Normal Univ. (China)
Lei Jiao, Capital Normal Univ. (China)
Qingli Zhou, Capital Normal Univ. (China)
Lijuan Li, Capital Normal Univ. (China)


Published in SPIE Proceedings Vol. 8909:
International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications
Marco Rahm; Konstantin Vodopyanov; Wei Shi; Cunlin Zhang, Editor(s)

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