Share Email Print
cover

Proceedings Paper

Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.

Paper Details

Date Published: 11 September 2013
PDF: 5 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890753 (11 September 2013); doi: 10.1117/12.2034902
Show Author Affiliations
Dan Shi, Changchun Univ. of Science and Technology (China)
Ming-hui You, Aviation Univ. of Air Force (China)
Zhan-Guo Li, Changchun Univ. of Science and Technology (China)
Guo-jun Liu, Changchun Univ. of Science and Technology (China)
Lin Li, Changchun Univ. of Science and Technology (China)
Zhong-liang Qiao, Changchun Univ. of Science and Technology (China)
Xiao-hui Ma, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

© SPIE. Terms of Use
Back to Top