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Proceedings Paper

Infrared optically active structure obtained by plasma-assisted deposition (PAD) of III-V and II-VI binary compound thin layers
Author(s): Victor Rares Medianu; Stefan A. Manea; Mihail F. Lazarescu
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Paper Abstract

A possible mechanism for the chemical interactions during the argon plasma assisted deposition of thin layers of AIIIBV and AIIBVI binary compounds is presented. The model is aimed to serve as a basis to guide the experimental conditions for the obtaining of reflective or anti-reflective stoichiometric films on different substrates used as laser optical components. The theoretical assumptions were found in a good agreement with the results of the structural and optical properties measurements in case of ZnS and GaAs deposition from polycrystalline targets on (100) oriented GaAs singlecrystalline substrates. X- ray diffractometry and scanning electronic microscopy as well as IR transmission techniques were used in this respect.

Paper Details

Date Published: 8 March 1995
PDF: 5 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203483
Show Author Affiliations
Victor Rares Medianu, Institute of Atomic Physics (Romania)
Stefan A. Manea, Institute of Physics and Technology of Materials (Romania)
Mihail F. Lazarescu, Institute of Physics and Technology of Materials (Romania)

Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)

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