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Proceedings Paper

Large-area transparent in visible range silicon carbide photodiode
Author(s): M. Borecki; A. Kociubiński; M. Duk; N. Kwietniewski; M. L. Korwin-Pawlowski; P. Doroz; J. Szmidt
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Paper Abstract

This paper describes the construction, fabrication and properties of large-area ultra violet detector that is transparent in the visible range. The device was made on n-type 4H SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a SiO2 layer was formed for passivation, without a guard ring. The design of the top and bottom electrodes of 4mm diameter UV sensitive area allows not less than 20% visible range transmission. This transmission was measured across sensitive area of examined devices and was only 5% lower than that of the substrate before implantation and electrodes deposition.

Paper Details

Date Published: 25 October 2013
PDF: 9 pages
Proc. SPIE 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 89030H (25 October 2013); doi: 10.1117/12.2034797
Show Author Affiliations
M. Borecki, Warsaw Univ. of Technology (Poland)
A. Kociubiński, Lublin Univ. of Technology (Poland)
M. Duk, Lublin Univ. of Technology (Poland)
N. Kwietniewski, Warsaw Univ. of Technology (Poland)
M. L. Korwin-Pawlowski, Univ. du Québec en Outaouais (Canada)
P. Doroz, Warsaw Univ. of Technology (Poland)
J. Szmidt, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 8903:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013
Ryszard S. Romaniuk, Editor(s)

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