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Proceedings Paper

Characterization of single photon avalanche diodes fabricated by 0.13um CMOS technology
Author(s): Jiayu Guo; Chuyu Chen; Liang Feng; Xiaofeng Pu; Xiaoli Ji; Feng Yan
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Paper Abstract

In this paper, two different SPAD structures are designed and fabricated by 0.13μm CMOS technology. For the structure-1, a guard ring with low implanted p-well is used at the edge of p+ region, which prevents the periphery region breakdown while for the structure-2 a “virtual” guard ring structure with a p- well under the whole P+ region is designed. The first structure exhibits a maximum photon detection probability of 15% and a typical dark count rate of 18 kHz at room temperature while the second structure exhibits a maximum of photon detection probability of 28% and a dark count rate of 23 kHz. These results would give a help for further advanced SPAD design.

Paper Details

Date Published: 21 August 2013
PDF: 6 pages
Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 890824 (21 August 2013); doi: 10.1117/12.2034784
Show Author Affiliations
Jiayu Guo, Nanjing Univ. (China)
Chuyu Chen, Nanjing Univ. (China)
Liang Feng, Nanjing Univ. (China)
Xiaofeng Pu, Nanjing Univ. (China)
Xiaoli Ji, Nanjing Univ. (China)
Feng Yan, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 8908:
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Jun Ohta; Nanjian Wu; Binqiao Li, Editor(s)

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