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Proceedings Paper

Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection
Author(s): Kaisheng Liao; Ning Li; Xihui Liu; Liang Huang; Qiaoyu Zeng; Xiaohao Zhou; Zhifeng Li
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Paper Abstract

This paper reports the fabrication details of ion-implanted Si:P blocked-impurity band photodetectors with lateral structure. A set of performance data has been measured under the operating temperature of 5.5 K. The device exhibits good blocking characteristics with low dark current density under 10−4 A/cm2. Linear black-body response has been observed at small bias voltage (1 V) and low temperature (5.5 K) with the peak responsivity of 0.8 A/W. The photocurrent (PC) spectra show response peak at 27.3 μm and extend to 40 μm (~7.5 THz), which indirectly proves the feasibility of the preparation of Si:P BIB detectors using ion implantation. In addition, other small features in the PC spectra are designated to associate with the photothermal ionization and the silicon phonon absorption processes. Our work provides an alternative convenient approach to fabricate Si:P BIB detector for far-infrared and terahertz radiation detection.

Paper Details

Date Published: 23 August 2013
PDF: 9 pages
Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 890913 (23 August 2013); doi: 10.1117/12.2034769
Show Author Affiliations
Kaisheng Liao, Shanghai Institute of Technical Physics (China)
Univ. of the Chinese Academy of Sciences (China)
Ning Li, Shanghai Institute of Technical Physics (China)
Xihui Liu, Shanghai Institute of Technical Physics (China)
Univ. of the Chinese Academy of Sciences (China)
Liang Huang, Shanghai Institute of Technical Physics (China)
Univ. of the Chinese Academy of Sciences (China)
Qiaoyu Zeng, Shanghai Institute of Technical Physics (China)
Univ. of the Chinese Academy of Sciences (China)
Xiaohao Zhou, Shanghai Institute of Technical Physics (China)
Zhifeng Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8909:
International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications
Marco Rahm; Konstantin Vodopyanov; Wei Shi; Cunlin Zhang, Editor(s)

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