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Proceedings Paper

Photodiodes with selective sensibility for control and space orientation of optoelectron systems
Author(s): V. Kantser; Valerian Dorogan; Anatol Snigur; Vladimir I. Brynzari; D. Kacherya; M. Kalugaryanu; O. Logofatu
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Paper Abstract

A selective photodiode with a 2D sensibility (diode-quadrant), prepared on In1-xGaxAs1-yPy by liquid phase epitaxy, is presented in this article. The diode quadrant has a circular form and consists of five photoactive elements: four for the determination of incident signal position and the fifth- a protective peripheral ring. The structure is optimized for the wavelength (lambda) equals 1.064 micrometers . The main parameters are: photosensibility spectrum half-width approximately 60 nm; the maximum photosensibility is S(lambda ) equals 1.064 equals 0.58 - 0.61 AW; external quantum efficiency is 67 - 71%; coordinate characteristic abruptness is K equals 104 V/(W-mm).

Paper Details

Date Published: 8 March 1995
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203463
Show Author Affiliations
V. Kantser, IAP AS (Moldova)
Valerian Dorogan, Technical Univ. of Moldova (Moldova)
Anatol Snigur, Technical Univ. of Moldova (Moldova)
Vladimir I. Brynzari, Technical Univ. of Moldova (Moldova)
D. Kacherya, CCPRB (Romania)
M. Kalugaryanu, CCPRB (Romania)
O. Logofatu, CCPRB (Romania)

Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)

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