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Proceedings Paper

Influence of charge-carrier concentration on photoelectric properties of ITO-nSi structures
Author(s): Ludmila S. Gagara; Elena A. Negru; Valentin Pleshka; C. Radu; Silvia Radu; Alexei V. Simaschevici; D. A. Serban
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Paper Abstract

The ITO-nSi semiconductor heterojunctions, carried out by the deposition of a thin oxide- semiconductor layer In2O3:SnO2 (ITO) on silicium substrates, have high photoelectric sensibility beginning just with 0.38 micrometers and it is almost uniform in the whole range of the visible spectrum. The aim of the present paper was to establish the optimum charge carrier concentration in Si substrates for obtaining ITO-nSi structures with highest photovoltaic parameters. For ITO-nSi structures prepared on Si substrates with charge carrier concentration n equals (0.9 - 5.5) 1015 cm-3, the maximum values of electrical parameters determined in photovoltaic regime were obtained: the open circuit voltage V equals 0.49 V, the short-circuit current I equals 13 - 14.8 mA/cm2, the fill factor FF equals 0.66 degree(s) and the conversion efficiency (tau) equals 7%.

Paper Details

Date Published: 8 March 1995
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203460
Show Author Affiliations
Ludmila S. Gagara, State Univ. of Moldova (Moldova)
Elena A. Negru, State Univ. of Moldova (Moldova)
Valentin Pleshka, State Univ. of Moldova (Moldova)
C. Radu, Institute of Optoelectronics (Moldova)
Silvia Radu, Institute of Optolelectronics (Romania)
Alexei V. Simaschevici, State Univ. of Moldova (Moldova)
D. A. Serban, State Univ. of Moldova (Moldova)

Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)

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