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Proceedings Paper

ROIC for gated 3D imaging LADAR receiver
Author(s): Guoqiang Chen; Junling Zhang; Pan Wang; Jie Zhou; Lei Gao; Ruijun Ding
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Paper Abstract

Time of flight laser range finding, deep space communications and scanning video imaging are three applications requiring very low noise optical receivers to achieve detection of fast and weak optical signal. HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode is the detector of choice thanks to its high quantum efficiency, high gain at low bias, high bandwidth and low noise factor. In this project, a readout integrated circuit of hybrid e-APD focal plane array (FPA) with 100um pitch for 3D-LADAR was designed for gated optical receiver. The ROIC works at 77K, including unit cell circuit, column-level circuit, timing control, bias circuit and output driver. The unit cell circuit is a key component, which consists of preamplifier, correlated double Sampling (CDS), bias circuit and timing control module. Specially, the preamplifier used the capacitor feedback transimpedance amplifier (CTIA) structure which has two capacitors to offer switchable capacitance for passive/active dual mode imaging. The main circuit of column-level circuit is a precision Multiply-by-Two circuit which is implemented by switched-capacitor circuit. Switched-capacitor circuit is quite suitable for the signal processing of readout integrated circuit (ROIC) due to the working characteristics. The output driver uses a simply unity-gain buffer. Because the signal is amplified in column-level circuit, the amplifier in unity-gain buffer uses a rail-rail amplifier. In active imaging mode, the integration time is 80ns. Integrating current from 200nA to 4uA, this circuit shows the nonlinearity is less than 1%. In passive imaging mode, the integration time is 150ns. Integrating current from 1nA to 20nA shows the nonlinearity less than 1%.

Paper Details

Date Published: 11 September 2013
PDF: 10 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890748 (11 September 2013); doi: 10.1117/12.2034589
Show Author Affiliations
Guoqiang Chen, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Junling Zhang, Shanghai Institute of Technical Physics (China)
Pan Wang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Jie Zhou, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Lei Gao, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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