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Proceedings Paper

InGaAs/InP photocathode grown by solid-source MBE
Author(s): Gang-cheng Jiao; Xiao-bing Xu; Lian-dong Zhang; Shu-fei Wang; Cha-xia Peng; Wei Cheng; Cang-lu Hu; Yu-jian Zhou; Chi Feng
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Paper Abstract

As an III-V semiconductor material, InxGa1-xAs can response from 0.87μm (GaAs) to 3.5μm (InAs) by tuning the relative amount of Gallium in the alloy. In order to get better the response of the photocathode in near infrared radiation region (1~1.7μm), InGaAs/InP heterostructure is widely used for photocathode material. The only composition of In0.53Ga0.47As is lattice matched to the InP substrate and their spectral response is from 0.9μm to 1.6μm. thus In0.53Ga0.47As/InP heterostructure is selected for near infrared response photocathode. The In0.53Ga0.47As layer has been grown on InP substrate used for photocathode by solid source molecular beam epitaxiy (SS-MBE). The photocathode samples were grown to optimize the growth temperature, III/V ratio and growth rate. The In0.53Ga0.47As layer crystalline quality and component were performed by applying high resolution X-ray diffractometer, surface roughness investigations were performed by applying atomic force microscopy. The Be doping characteristic was checked by the electrochemical capacitance-voltage(ECV). The optical performance of the photocathode is measured by the spectral meter. The collected information is being used to correct and enhance growth characteristics and optimize InGaAs/InP photocathode structure to increase spectral response and quantum efficiency.

Paper Details

Date Published: 16 August 2013
PDF: 6 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 891216 (16 August 2013); doi: 10.1117/12.2034460
Show Author Affiliations
Gang-cheng Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Northwest Polytechnical Univ. (China)
North Night-Vision Science & Technology Group Corp., Ltd. (China)
Xiao-bing Xu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Lian-dong Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Shu-fei Wang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Cha-xia Peng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Wei Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Cang-lu Hu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Yu-jian Zhou, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Chi Feng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)


Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)

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