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Proceedings Paper

Investigation of optical nonlinear properties in semiconductor GaN
Author(s): Yu Fang; Fei Ye; Zhong-guo Li; Zhao-yu Zong; Ying-lin Song
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Paper Abstract

The optical nonlinearities of bulk GaN single crystal are investigated by conducting Z-scan experimental measurements, using nanosecond pulses at 532nm. The material’s nonlinear absorptive and refractive optical nonlinearities are determined by measuring the normalized transmittance with and without an aperture in the far field. After simulating the experimental curves, the two-photon absorption (TPA) coefficient, especially the refractive-index change induced by two-photon-excited free carrier, are obtained. The experimental results show that GaN has reverse saturable absorption and self-defocusing effect at 532 nm, indicating this material is a good candidate for future photonics applications. The theoretical simulation fit well with experimental results.

Paper Details

Date Published: 19 September 2013
PDF: 6 pages
Proc. SPIE 8905, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications, 89051F (19 September 2013); doi: 10.1117/12.2034204
Show Author Affiliations
Yu Fang, Soochow Univ. (China)
Fei Ye, Soochow Univ. (China)
Zhong-guo Li, Harbin Institute of Technology (China)
Zhao-yu Zong, Harbin Institute of Technology (China)
Ying-lin Song, Soochow Univ. (China)
Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 8905:
International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications
Farzin Amzajerdian; Astrid Aksnes; Weibiao Chen; Chunqing Gao; Yongchao Zheng; Cheng Wang, Editor(s)

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