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Proceedings Paper

A novel single dot test structure for determining specific contact resistivity
Author(s): Yue Pan; Aaron M. Collins; Anthony S. Holland
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Paper Abstract

The specific contact resistivity of a metal-semiconductor ohmic contact can be determined in various ways and several of these use the transmission line model approach. Concentric circular contacts have circular equipotential and using this and the transmission line model equations for such contacts, a new technique for determining specific contact resistivity is presented. An analytical technique is used to determine the error of this structure and the developed analytical equations are presented. Finite-element modeling results for Al-SiC ohmic contacts are presented to validate the analytical equations. The scaling behavior of this structure is also discussed.

Paper Details

Date Published: 7 December 2013
PDF: 11 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89232Q (7 December 2013); doi: 10.1117/12.2034077
Show Author Affiliations
Yue Pan, RMIT Univ. (Australia)
Aaron M. Collins, RMIT Univ. (Australia)
Anthony S. Holland, RMIT Univ. (Australia)

Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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