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Proceedings Paper

Technology discussion of reducing the equivalent background illumination of Gen Ⅲ Image Intensifier
Author(s): Yu-feng Zhu; Ni Zhang; Dan Li; Jing Nie; Tai-min Zhang; Xiao-jian Liu; Zhao-lu Liu; Ling-Yun Fu
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Paper Abstract

As the development of Gen III Image Intensifier, photocathode sensitivity, spatial static resolution and signal-to-noise ratio of the devices are continuously improved except for the view effect. However, for most devices, the equivalent background illumination (EBI) is excessive, and considerable part is more than an order of magnitude. Many factors have an effect on the EBI of the Gen III Image Intensifier. By academic analysis and experiment research, it is demonstrated that: It is the thermal electron emission of photocathode, dark current, gain of micro-channel plate (MCP) with ion barrier film(IBF), electric field strength between MCP and photocathode and the light feedback of phosphor that lend to the EBI, but for the phosphor screen made by the normal process, because of the aluminum film, EBI caused by the optical feedback is slightly lower, which can not cause the excessive EBI. For the MCP with IBF after normal processing, even the first focused voltage is added to 350V, the EBI does not exceed the highest value of 1.66×10-7 allowed by national military standard. Needless to say the photocathode is the focus factor of the EBI after excluding the phosphor screen, the MCP and other influencing factors. It is believed that the thermal electron emission of photocathode leads to the excessive EBI. Finally, without reducing the photocathode sensitivity, by optimizing activation technics, i.e., reduce CsO quantity, and aging test disposal, the thermal electron emission is weaken, the EBI is becoming lower, most of the products satisfy with request of technical standard in this index. That is valuable to accelerate the engineering of Gen III Image Intensifier.

Paper Details

Date Published: 16 August 2013
PDF: 6 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120Z (16 August 2013); doi: 10.1117/12.2034058
Show Author Affiliations
Yu-feng Zhu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ni Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Dan Li, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Jing Nie, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Tai-min Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Xiao-jian Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Zhao-lu Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ling-Yun Fu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)


Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)

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