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Proceedings Paper

Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure
Author(s): Yue Pan; Aaron M. Collins; Fahid Algahtani; Patrick W. Leech; Geoffrey K. Reeves; Philip Tanner; Anthony S. Holland
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Paper Abstract

Low resistance contracts to highly doped silicon carbide (SiC) are investigated. Using a novel test structure that is easy to fabricate and easy to use, this paper demonstrates how it is used to reliably determine relatively low specific contact resistivities which vary with heat treatment. The test structure requires no error correction and is not affected by parasitic resistances. Using the test structure, small changes in specific contact resistivity are determined for small temperature changes. Results will be presented and discussed on the application of this novel test structure for nickel to highly doped SiC.

Paper Details

Date Published: 7 December 2013
PDF: 5 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892356 (7 December 2013); doi: 10.1117/12.2033910
Show Author Affiliations
Yue Pan, RMIT Univ. (Australia)
Aaron M. Collins, RMIT Univ. (Australia)
Fahid Algahtani, RMIT Univ. (Australia)
Patrick W. Leech, RMIT Univ. (Australia)
Geoffrey K. Reeves, RMIT Univ. (Australia)
Philip Tanner, Griffith Univ. (Australia)
Anthony S. Holland, RMIT Univ. (Australia)

Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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